Infineon Technologies Small Signal Bipolar Junction Transistors (BJT) 237

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR101T-E6327

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR112F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

260

BCR142F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR114F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

BCR139F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

1

260

BCR139T-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR146F-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR153F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR149T-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR162F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR151T-E6327

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR189F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR189T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR199T-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR164T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR196F-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR196T-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR192F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR103F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR103T-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR183F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

260

BCR198F-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

1

260

BCR133F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

BCR185F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR135F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR169F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

120

SILICON

BCR191F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

50

BCR158F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR179F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

120

SILICON

BSP50E6327HTSA1

Infineon Technologies

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

45 V

DUAL

R-PDSO-G4

1

COLLECTOR

AEC-Q101

BSP60E6327HTSA1

Infineon Technologies

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

45 V

DUAL

R-PDSO-G4

1

COLLECTOR

AEC-Q101

BSP62E6327HTSA1

Infineon Technologies

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

80 V

DUAL

R-PDSO-G4

1

COLLECTOR

AEC-Q101

BCR523UE6327HTSA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

BCR523UE6433HTMA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

150 Cel

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G6

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

BCV48E6327HTSA1

Infineon Technologies

PNP

DARLINGTON

YES

200 MHz

.5 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

2000

150 Cel

SILICON

60 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

BCV26E6327HTSA1

Infineon Technologies

PNP

DARLINGTON

YES

200 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

4000

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BCV27E6327HTSA1

Infineon Technologies

NPN

DARLINGTON

YES

170 MHz

.36 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

4000

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BCP49E6327HTSA1

Infineon Technologies

NPN

DARLINGTON

YES

200 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

150 Cel

SILICON

60 V

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

SMBTA06UPNE6327HTSA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

150 Cel

SILICON

80 V

TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

BCW68GE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

200 MHz

.8 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BCR133WE6327HTSA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

40

260

PZTA42E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

70 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

150 Cel

SILICON

300 V

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

SMBTA06E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

80 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC846BWE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC857BE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC857CE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BCX55E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

60 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

BC847BWE6433HTMA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395