N-CHANNEL Small Signal Field Effect Transistors (FET) 624

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSS138W-E6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

3.5 ohm

.28 A

DUAL

R-PDSO-G3

1

260

4.2 pF

BSS138W-E6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

3.5 ohm

.28 A

DUAL

R-PDSO-G3

4.2 pF

AO3402L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.055 ohm

4 A

DUAL

R-PDSO-G3

TO-236

41 pF

AO7800

Alpha & Omega Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.3 ohm

.9 A

DUAL

R-PDSO-G6

14 pF

SFT1407-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

20 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1 W

SILICON

Tin/Bismuth (Sn/Bi)

.028 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

e6

190 pF

LSK489TO-716LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.5 W

UNSPECIFIED

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

BOTTOM

O-XBCY-W6

TO-71

3 pF

LSK489SOT-236LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.5 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

DUAL

R-PDSO-G6

3 pF

DMN2400UFB4-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.47 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.55 ohm

.75 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

e4

30

260

4.2 pF

DMN2300UFB-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.78 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.175 ohm

1.32 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

SI4286DY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.9 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0325 ohm

7 A

DUAL

R-PDSO-G8

1

Not Qualified

30

260

TSM2N7002KCXRFG

Taiwan Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.357 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.357 W

150 Cel

SILICON

-55 Cel

TIN

2 ohm

.3 A

DUAL

R-PDSO-G3

3

Not Qualified

e3

30

260

6 pF

DMS3017SSD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.79 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.012 ohm

.008 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMS3019SSD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.79 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.015 ohm

.007 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

2V7002LT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

7.5 ohm

.115 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

5 pF

AEC-Q101

DMN3029LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0186 ohm

5.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMS3016SFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.08 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

10.2 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.013 ohm

7 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

NTMFS4833NST1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

YES

86.2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

156 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

16 A

DUAL

R-PDSO-F8

1

e3

30

260

NTMFS4833NST3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

YES

86.2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

156 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

16 A

DUAL

R-PDSO-F8

1

e3

30

260

NTMFS4854NST1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

YES

86.2 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

149 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

15.2 A

DUAL

R-PDSO-F8

1

e3

NTMFS4854NST3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

YES

86.2 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

149 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

15.2 A

DUAL

R-PDSO-F8

1

e3

30

260

NTMFS4925NET1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23.2 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

48 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.001 ohm

16.7 A

DUAL

R-PDSO-F5

3

DRAIN

e3

DMN26D0UFB4-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.24 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3 ohm

.24 A

BOTTOM

R-PBCC-N3

1

DRAIN

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

NTMS5835NLR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.014 ohm

9.2 A

DUAL

R-PDSO-G8

1

e3

NOT SPECIFIED

NOT SPECIFIED

NTMS5838NLR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0308 ohm

5.8 A

DUAL

R-PDSO-G8

1

e3

NOT SPECIFIED

NOT SPECIFIED

2N6660JTX02

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

AMPLIFIER

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

.99 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

.99 A

BOTTOM

O-MBCY-W3

TO-205AD

NOT SPECIFIED

NOT SPECIFIED

10 pF

2N7002-13-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.21 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

13.5 ohm

.115 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY, LOW THRESHOLD

e3

30

260

5 pF

NMLU1210TWG

Onsemi

N-CHANNEL

COMPLEX

YES

UNSPECIFIED

SWITCHING

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.032 ohm

1.16 A

DUAL

S-XDSO-N6

1

DRAIN

e3

30

260

DMG7702SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMG7702SFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMS3012SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMS3012SFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMN55D0UTQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.16 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.16 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

TN0604N3-G-P005

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

e3

50 pF

TN0604N3-G-P013

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

e3

50 pF

TN0620N3-G-P014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.25 A

BOTTOM

O-PBCY-T3

TO-92

e3

35 pF

DMB53D0UV-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200

150 Cel

SILICON

MATTE TIN

4 ohm

.16 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMN5L06VK-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.28 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3 ohm

.28 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

5 pF

AEC-Q101

DMN2500UFB4-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

.81 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMN2500UFB4-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

.81 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMS3014SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9.5 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

9 A

DUAL

R-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

AEC-Q101

SMMBF4391LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

-55 Cel

TIN

30 ohm

DUAL

R-PDSO-G3

1

TO-236

e3

260

3.5 pF

AEC-Q101

SI4090DY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Pure Matte Tin (Sn) - annealed

.01 ohm

19.7 A

DUAL

R-PDSO-G8

1

MS-012AA

30

260

FK3503010L

Panasonic

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

MTM78E2B0LBF

Panasonic

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.7 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 ohm

4 A

DUAL

R-PDSO-F8

NOT SPECIFIED

NOT SPECIFIED

NVF2201NT1G

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

1

.3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.3 A

1

e3

30

260

NTTFS4C05NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

75 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0051 ohm

12 A

DUAL

S-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4C06NT3G

Onsemi

N-CHANNEL

SINGLE

YES

30.5 W

1

69 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

69 A

1

e3

30

260

DMN3030LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.3 W

1

8.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.6 A

1

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.