| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.28 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.5 W |
150 Cel |
SILICON |
-55 Cel |
3.5 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
1 |
260 |
4.2 pF |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.28 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.5 W |
150 Cel |
SILICON |
-55 Cel |
3.5 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
4.2 pF |
||||||||||||||||||||||||
|
|
Alpha & Omega Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.055 ohm |
4 A |
DUAL |
R-PDSO-G3 |
TO-236 |
41 pF |
||||||||||||||||||||||||||
|
|
Alpha & Omega Semiconductor |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.3 ohm |
.9 A |
DUAL |
R-PDSO-G6 |
14 pF |
||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
20 W |
PLASTIC/EPOXY |
SWITCHING |
45 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1 W |
SILICON |
Tin/Bismuth (Sn/Bi) |
.028 ohm |
14 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e6 |
190 pF |
|||||||||||||||||||||||
|
|
Linear Integrated Systems |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.5 W |
UNSPECIFIED |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
2 |
6 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
.5 W |
150 Cel |
SILICON |
-55 Cel |
BOTTOM |
O-XBCY-W6 |
TO-71 |
3 pF |
||||||||||||||||||||||||||
|
|
Linear Integrated Systems |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
.5 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
2 |
6 |
SMALL OUTLINE |
FET General Purpose Small Signal |
JUNCTION |
.5 W |
150 Cel |
SILICON |
-55 Cel |
DUAL |
R-PDSO-G6 |
3 pF |
|||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.47 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.75 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.55 ohm |
.75 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
Not Qualified |
e4 |
30 |
260 |
4.2 pF |
|||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.78 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.175 ohm |
1.32 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY, LOW THRESHOLD |
e4 |
30 |
260 |
||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.9 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0325 ohm |
7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
||||||||||||||||||||||
|
|
Taiwan Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.357 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.357 W |
150 Cel |
SILICON |
-55 Cel |
TIN |
2 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
3 |
Not Qualified |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.79 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
10 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.012 ohm |
.008 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.79 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
9 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.015 ohm |
.007 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.115 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
5 pF |
AEC-Q101 |
|||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
8 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0186 ohm |
5.3 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.08 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
10.2 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.013 ohm |
7 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR |
YES |
86.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
16 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR |
YES |
86.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
16 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR |
YES |
86.2 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
149 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
15.2 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR |
YES |
86.2 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
149 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
15.2 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
23.2 W |
PLASTIC/EPOXY |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.001 ohm |
16.7 A |
DUAL |
R-PDSO-F5 |
3 |
DRAIN |
e3 |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.24 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
3 ohm |
.24 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD |
e4 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.014 ohm |
9.2 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.0308 ohm |
5.8 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6.25 W |
METAL |
AMPLIFIER |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.99 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
3 ohm |
.99 A |
BOTTOM |
O-MBCY-W3 |
TO-205AD |
NOT SPECIFIED |
NOT SPECIFIED |
10 pF |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.54 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.21 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
13.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY, LOW THRESHOLD |
e3 |
30 |
260 |
5 pF |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMPLEX |
YES |
UNSPECIFIED |
SWITCHING |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.032 ohm |
1.16 A |
DUAL |
S-XDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
12 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.01 ohm |
9.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
12 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.01 ohm |
9.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
12 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.01 ohm |
9.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
12 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.01 ohm |
9.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.2 W |
PLASTIC/EPOXY |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.16 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
4 ohm |
.16 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.75 ohm |
.7 A |
BOTTOM |
O-PBCY-T3 |
HIGH INPUT IMPEDANCE |
TO-92 |
e3 |
50 pF |
|||||||||||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.75 ohm |
.7 A |
BOTTOM |
O-PBCY-T3 |
HIGH INPUT IMPEDANCE |
TO-92 |
e3 |
50 pF |
|||||||||||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
1 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
6 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
e3 |
35 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE |
YES |
.25 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
.3 V |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
200 |
150 Cel |
SILICON |
MATTE TIN |
4 ohm |
.16 A |
DUAL |
R-PDSO-F6 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.28 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3 ohm |
.28 A |
DUAL |
R-PDSO-F6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
5 pF |
AEC-Q101 |
|||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.95 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.4 ohm |
.81 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.95 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.4 ohm |
.81 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.5 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.014 ohm |
9 A |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
-55 Cel |
TIN |
30 ohm |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
260 |
3.5 pF |
AEC-Q101 |
||||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Pure Matte Tin (Sn) - annealed |
.01 ohm |
19.7 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
30 |
260 |
|||||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
6 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.7 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.025 ohm |
4 A |
DUAL |
R-PDSO-F8 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.3 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.3 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
75 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0051 ohm |
12 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
30.5 W |
1 |
69 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
69 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
2.3 W |
1 |
8.6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
8.6 A |
1 |
e3 |
30 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.