YES Small Signal Field Effect Transistors (FET) 899

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTJD3158CT1G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.82 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.375 ohm

.63 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

5 pF

DMN33D8LDW-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

3 ohm

.25 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

SZNUD3105DMT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn) - annealed

1.3 ohm

.5 A

DUAL

R-PDSO-G6

1

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

DMP58D0SV-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.16 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

8 ohm

.16 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

1.4 pF

MIL-STD-202

NUS3116MTR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5.47 A

8

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.05 ohm

4.4 A

BOTTOM

S-XBCC-N8

1

Not Qualified

e3

260

DMP57D5UFB-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.425 W

PLASTIC/EPOXY

SWITCHING

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

6 ohm

.2 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

260

NTLUD3A260PZTAG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

1.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

1.3 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

30

260

NTLUD3A260PZTBG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

1.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

1.3 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

30

260

NTF2955PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.185 ohm

1.7 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e3

30

260

SI1034X-T1-GE3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.28 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.18 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.18 A

DUAL

R-PDSO-F6

1

Not Qualified

LOW THRESHOLD

e3

30

260

SI2303BDS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.49 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

1.49 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

260

SI3433BDV-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE MATTE TIN

.042 ohm

4.3 A

DUAL

R-PDSO-G6

1

Not Qualified

DMP2225L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.08 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.11 ohm

2.6 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

IRF7478QTRPBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.026 ohm

7 A

DUAL

R-PDSO-G8

MS-012AA

37 pF

DMN2215UDM-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.65 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.1 ohm

2 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

SQ2361EES-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.15 ohm

2.5 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

40

260

50 pF

2N7002DWL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.3 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

3 pF

BSD840NL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.88 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.4 ohm

.88 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSS816NWL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.16 ohm

1.4 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

10 pF

BSD235CL6327

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.95 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.35 ohm

.95 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSD235NL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.95 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.35 ohm

.95 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSS214NWL6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

DMN66D0LW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.115 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMN4010LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.45 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.012 ohm

11.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

MCH3376-TL-W

Onsemi

P-CHANNEL

SINGLE

YES

.8 W

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.5 A

1

e6

30

260

NTHD4401PT3G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.155 ohm

2.1 A

DUAL

R-PDSO-C8

1

e3

30

260

50 pF

2N7002E,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.385 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

TIN

3 ohm

.385 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

10 pF

2N7002F,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.475 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

TIN

2 ohm

.475 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

10 pF

BF861A,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

BF861B,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

260

2.7 pF

BF861C,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

BF862,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.04 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BFR30,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

BFR31,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

IEC-134

BFT46,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

BSR56,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

25 ohm

.02 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

BSR57,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

40 ohm

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

BSR58,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

60 ohm

.005 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

BSS83,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.23 W

PLASTIC/EPOXY

SWITCHING

10 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.05 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN

120 ohm

.05 A

DUAL

R-PDSO-G4

SUBSTRATE

Not Qualified

e3

30

260

PHT2NQ10T,135

NXP Semiconductors

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

150 Cel

SILICON

.43 ohm

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PMBF4391,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.012 A

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

80 ns

20 ns

Tin (Sn)

30 ohm

.012 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

3.5 pF

PMBF4392,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

60 ohm

.006 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

3.5 pF

PMBF4393,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

100 ohm

.003 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

3.5 pF

PMBFJ108,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

8 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

15 pF

PMBFJ109,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

12 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

15 pF

PMBFJ110,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

18 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

15 pF

PMBFJ111,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

30 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PMBFJ112,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

50 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.