Onsemi Small Signal Field Effect Transistors (FET) 331

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SZNUD3105DMT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn) - annealed

1.3 ohm

.5 A

DUAL

R-PDSO-G6

1

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NUS3116MTR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5.47 A

8

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.05 ohm

4.4 A

BOTTOM

S-XBCC-N8

1

Not Qualified

e3

260

NTLUD3A260PZTAG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

1.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

1.3 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

30

260

NTLUD3A260PZTBG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

1.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

1.3 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

30

260

NTF2955PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.185 ohm

1.7 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e3

30

260

MCH3376-TL-W

Onsemi

P-CHANNEL

SINGLE

YES

.8 W

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.5 A

1

e6

30

260

NTHD4401PT3G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.155 ohm

2.1 A

DUAL

R-PDSO-C8

1

e3

30

260

50 pF

MCH3377-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.083 ohm

3 A

DUAL

R-PDSO-F3

1

e6

30

260

NTMFS4847NAT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0062 ohm

11.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

MCH3474-TL-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

.05 ohm

4 A

DUAL

R-PDSO-F3

1

e6

MCH3477-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

4.5 A

1

e6

NTGS3443T2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.065 ohm

2.2 A

DUAL

R-PDSO-G6

1

ULTRA LOW RESISTANCE

e3

30

260

NTGS4111PT2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.06 ohm

2.6 A

DUAL

R-PDSO-G6

1

e3

30

260

PCP1403-TD-H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.5 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.117 ohm

4.5 A

SINGLE

R-PSSO-F3

1

DRAIN

TO-243AA

e6

30

260

NTGD3147FT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.145 ohm

2.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTGD3149CT1G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.06 ohm

2.4 A

DUAL

S-PDSO-G6

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTGD4169FT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.09 ohm

2.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTHD2110TT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.04 ohm

4.5 A

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

NTMD4184PFR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.31 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.095 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

80 pF

NTMD6601NR2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.215 ohm

1.1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

30 pF

NTMFS4846NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0051 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4847NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

85 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0062 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

NTMFS4849NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42.4 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0079 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMS4176PR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.018 ohm

5.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMS4872NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0135 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

200 pF

NTR3161NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.05 ohm

3.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR3162PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.07 ohm

2.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR3162PT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.07 ohm

2.2 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR4170NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.055 ohm

3.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR4171PT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.075 ohm

2.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4921NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0108 ohm

.0088 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

NTTFS4928NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

37 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0135 ohm

7.3 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTGS3455T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.75 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.1 ohm

2.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

30

240

NTHD5904T1

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

3.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.075 ohm

3.1 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

NTHD5905T1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

8 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

3 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

NTHS5402T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

30 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

4.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.035 ohm

4.9 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

NTHS5443T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

3.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

3.6 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTHS5445T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

8 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.035 ohm

5.2 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTMS3P03R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.86 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

e0

NOT SPECIFIED

235

135 pF

NTMSD3P102R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.34 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

NOT SPECIFIED

235

135 pF

NTQD6866R2

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.78 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

4.7 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e0

235

175 pF

NTQS6463R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.67 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.02 ohm

5.5 A

DUAL

R-PDSO-G8

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e0

235

NTTS2P03R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

2.1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

2.1 A

DUAL

S-PDSO-G8

1

Not Qualified

e0

235

NTTD1P02R2

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.45 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.16 ohm

1.45 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTHD4N02FT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

3.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

2.9 A

DUAL

R-XDSO-C8

Not Qualified

e0

235

50 pF

NTR0202PLT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

.4 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

NTR1P02T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

NTR1P02T3

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.