Ampleon Netherlands B V - CLF1G0035-100P

3SK168B by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.25W. Ideal for applications requiring METAL SEMICONDUCTOR technology, operating up to 125 °C.

BF991-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max drain current of 20 mA and a breakdown voltage of 20 V. This compact surface mount device operates in the very high frequency band, ideal for advanced RF circuits.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Finish: TIN; Package Style (Meter): SMALL OUTLINE;

BF992R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max DS breakdown voltage of 20V and operates in the very high frequency band. This surface-mount transistor ensures efficient performance with a compact design.

Broadcom's ATF-36163-BLKG is an N-channel RF FET with a 3V DS breakdown voltage, 9.4 dB power gain, and operates in depletion mode. Ideal for amplifier applications in the Ku band, it features a small outline package with Gull Wing terminals and high electron mobility technology. With a max operating temperature of 150°C and 0.18W power dissipation, this transistor offers reliable performance in various RF signal processing systems.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;

The NXP Semiconductors BF512,215 is a single N-channel RF FET with a 20V DS breakdown voltage. Operating in depletion mode, it offers very high frequency band performance for amplifier applications. With a max power dissipation of 0.25W and operating temperature up to 150°C, this transistor features a small outline package suitable for surface mount assembly.

RF Small Signal Field-Effect Transistors;

BF245CRL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Terminal Finish: TIN; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

2N4220 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.3W Power Dissipation and 200°C Max Temp. Features include 4 terminals, SILICON element material, and 2pF Crss feedback capacitance.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;

MRF966 by Motorola is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE, DEPLETION MODE with ULTRA HIGH FREQUENCY BAND support. With a max power dissipation of 0.35W and operating temp up to 125°C, it's ideal for high-frequency signal amplification needs.

BF1105R,215 by NXP Semiconductors is an N-CHANNEL RF FET with a PLASTIC/EPOXY package. It operates in DUAL GATE ENHANCEMENT MODE at 150°C max temp. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to its 0.03 A drain current and 0.04 pF feedback capacitance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 12 V;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

RF Small Signal Field-Effect Transistors;