Broadcom - ATF-50189

The NXP Semiconductors BGM1013 is a wide band low power RF amplifier with 24 dB gain. It operates from 100 MHz to 3000 MHz, with -10 dBm CW input power and 5V supply voltage. Ideal for applications requiring surface mount components in RF & microwave systems.

Qorvo's SPF5043ZSR is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. This wide band low power device is ideal for applications requiring surface mount components in RF and microwave systems.

WIDE BAND HIGH POWER;

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Minimum Operating Frequency: 2000 MHz; Maximum Voltage Standing Wave Ratio: 1.5; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Input Power (CW): 20 dBm;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

Broadcom's MGA-62563-TR2G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3000 MHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3/5V supplies.

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.

Analog Devices' HMC8411LP2FE is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it is ideal for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND HIGH POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Construction: COMPONENT; Additional Features: I/P POWER-MAX (PEAK)=31.76DBM; Gain: 8 dB; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -54 Cel;

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.