Diodes Incorporated - LMN400E01-7

  1. Home
  2. Diodes Incorporated - LMN400E01-7
LMN400E01-7 by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number LMN400E01-7
Description Small Signal Bipolar Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
Datasheet LMN400E01-7 Datasheet
NAME DESCRIPTION
Other Names: LMN400E01DICT
LMN400E01CT-ND
LMN400E01TR
LMN400E01DITR
LMN400E017
LMN400E01DKR
LMN400E01TR-ND
LMN400E01CT
LMN400E01DKR-ND
LMN400E01DIDKR
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): 30
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SBC817-25LT1G by Good-ark Electronics

SBC817-25LT1G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2222AUA by Silicon Transistor

2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMMBTA42LT1G by Onsemi

SMMBTA42LT1G

Onsemi

SMMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.
JANTX2N2222AUA/TR by Microsemi

JANTX2N2222AUA/TR

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Terminal Position: DUAL;
BC847B by STMicroelectronics

BC847B

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
ULN2803AFWG by Toshiba

ULN2803AFWG

Toshiba

Toshiba's ULN2803AFWG is an NPN BJT with 8 Darlington banks, built-in diode and resistor. Ideal for switching applications, it has a max IC of 0.5A and VCE of 50V. With a hFE of 1000, this surface-mount transistor comes in a small outline package shape.
2N2905A by Texas Instruments

2N2905A

Texas Instruments

2N2905A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high transition frequency (200MHz).
BC547C by Surge Components

BC547C

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: WIRE;
SMBT2222AE6327HTSA1 by Infineon Technologies

SMBT2222AE6327HTSA1

Infineon Technologies

SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.
MMBT2222A,215 by Nexperia

MMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
2N2905A by Hi-tron Semiconductor

2N2905A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222A by Minilogic Device

2N2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
2N2222AUB by Semicoa

2N2222AUB

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3906 by STMicroelectronics

2N3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Surge Components

MMBT2222A

Surge Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;
2N3906 by Microsemi

2N3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2907A by National Semiconductor

2N2907A

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
MMBT3904-TP by Micro Commercial Components

MMBT3904-TP

Micro Commercial Components

MMBT3904-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, ideal for amplifier applications. With max power dissipation of 0.35W and max collector-emitter voltage of 40V, it operates at up to 150°C. This surface mount device has a small outline package style and offers a transition frequency of 300MHz.
MMBTA42LT1G by Onsemi

MMBTA42LT1G

Onsemi

MMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package makes it suitable for surface mount designs requiring a single configuration.
2N3904 by NXP Semiconductors

2N3904

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;