Freescale Semiconductor - A2T26H300-24SR6

  1. Home
  2. Freescale Semiconductor - A2T26H300-24SR6
A2T26H300-24SR6 by Freescale Semiconductor

Image shown is a representation only.

Manufacturer Freescale Semiconductor
Manufacturer's Part Number A2T26H300-24SR6
Description RF Power Field-Effect Transistors;
Datasheet A2T26H300-24SR6 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CLF1G0035S-100 by NXP Semiconductors

CLF1G0035S-100

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF141G by Tyco Electronics M/a-com

MRF141G

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
CLF1G0035-50 by NXP Semiconductors

CLF1G0035-50

NXP Semiconductors

The NXP Semiconductors CLF1G0035-50 is an RF Power FET with a min DS Breakdown Voltage of 150V, operating in the S Band. It features Gallium Nitride technology, DEPLETION MODE, and is suitable for AMPLIFIER applications. The package style is FLANGE MOUNT with CERAMIC/METAL-SEALED COFIRED body material.
MRF151 by Motorola

MRF151

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 200 Cel; JESD-30 Code: O-CRFM-F4;
934061037118 by NXP Semiconductors

934061037118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; JESD-30 Code: R-CDFP-F2;
BLF6G15LS-500H by NXP Semiconductors

BLF6G15LS-500H

NXP Semiconductors

BLF6G15LS-500H by NXP is an N-channel RF power FET designed for switching applications. It features a max drain current of 45 A, a breakdown voltage of 100 V, and operates in the L band. Its flatpack design ensures efficient surface mounting in various electronic devices.
PD84006-E by STMicroelectronics

PD84006-E

STMicroelectronics

PD84006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 165 °C.
A2T09VD250NR1 by NXP Semiconductors

A2T09VD250NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
SD2933W by STMicroelectronics

SD2933W

STMicroelectronics

SD2933W by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 648W. It operates at up to 200 °C, making it suitable for high-power applications in surface-mount configurations.
PD54008S-E by STMicroelectronics

PD54008S-E

STMicroelectronics

PD54008S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.
NE5550779A-T1-A by Renesas Electronics

NE5550779A-T1-A

Renesas Electronics

NE5550779A-T1-A by Renesas Electronics is an N-CHANNEL RF FET with 2.1A max drain current and 17.8W power dissipation. Utilized in applications requiring high-power amplification, it operates up to 150°C, making it suitable for various RF power applications.
MRF6V2150NR1 by Freescale Semiconductor

MRF6V2150NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
STAP57030 by STMicroelectronics

STAP57030

STMicroelectronics

STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
PD54008 by STMicroelectronics

PD54008

STMicroelectronics

STMicroelectronics PD54008 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a GULL WING terminal form, SMALL OUTLINE package style, and can handle up to 73W power dissipation at 165 °C.
MRF300AN-13MHZ by NXP Semiconductors

MRF300AN-13MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF141G by Motorola

MRF141G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Power Dissipation Ambient: 500 W; Operating Mode: ENHANCEMENT MODE;
AFT05MS031NR1 by NXP Semiconductors

AFT05MS031NR1

NXP Semiconductors

NXP Semiconductors' AFT05MS031NR1 is an N-CHANNEL RF Power FET with 294W power dissipation, suitable for surface mount applications. Featuring METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C and can withstand peak reflow temperature of 260°C. Ideal for high-power RF amplification in various electronic devices.
D2003UK by Tt Electronics Plc

D2003UK

Tt Electronics Plc

D2003UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, it has a max Drain Current of 1A and can withstand temperatures up to 200°C.
MRF8HP21130HSR3 by NXP Semiconductors

MRF8HP21130HSR3

NXP Semiconductors

NXP Semiconductors' MRF8HP21130HSR3 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand a peak reflow temperature of 260°C for 40s.
MRF6522-70 by New Jersey Semiconductor Products

MRF6522-70

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;