Hammond Manufacturing - 1418N4SSK16

1418N4SSK16 by Hammond Manufacturing

Image shown is a representation only.

Manufacturer	Hammond Manufacturing
Manufacturer's Part Number	1418N4SSK16
Description	Limited Part Number Data;
Datasheet	1418N4SSK16 Datasheet

1418N4SSK16 Technical Details

NAME	DESCRIPTION
Area (L x W):	720in² (4645cm²)
Other Names:	4917-1418N4SSK16 1418N4SSK16-ND
Category:	Boxes, Enclosures, Racks Boxes
Color:	Natural
Material:	Metal, Stainless Steel
Size / Dimension:	30.000" L x 24.000" W (762.00mm x 609.60mm)
Weight:	100 lbs (45.4 kg)
Standard Package:	1
Ratings:	IP66, JIC EGP-1-1967, NEMA 3R,4,4X,12,13, UL-508
Design:	Hinged Door, Lid
Thickness:	14 Gauge
Series:	1418
Shipping Info:	Drop shipped from the Manufacturer's Warehouse
Container Type:	Box
Height:	16.000" (406.40mm)
Features:	Interior Panels, Mounting Flange
Package:	Case
Base Product Number:	1418
Moisture Sensitivity Level (MSL):	Not Applicable

Popular Products

1N4148WT

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

LM555CM

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

2N2222A

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

NDT2955

Onsemi

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

1N4148WT

Onsemi

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

1N4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ABS10-32.768KHZ-T

Abracon

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.