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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSC050N03MSGATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 30 V; |
| Datasheet | BSC050N03MSGATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 16 A |
| Maximum Pulsed Drain Current (IDM): | 320 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0063 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 35 mJ |
| Other Names: |
BSC050N03MS G BSC050N03MSGINTR-ND BSC050N03MSGATMA1CT BSC050N03MSGXT BSC050N03MSGATMA1DKR-NDTR-ND BSC050N03MSGATMA1TR 2156-BSC050N03MSGATMA1 BSC050N03MSG IFEINFBSC050N03MSGATMA1 BSC050N03MSGINCT-ND BSC050N03MSGINTR BSC050N03MSGATMA1DKR BSC050N03MSGINDKR BSC050N03MSGINDKR-ND BSC050N03MSGATMA1CT-NDTR-ND BSC050N03MSGINCT SP000311507 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
