Infineon Technologies - BSC079N03LSCGATMA1

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BSC079N03LSCGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC079N03LSCGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Drain-Source On Resistance: .0127 ohm;
Datasheet BSC079N03LSCGATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0127 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 10 mJ
Other Names: BSC079N03LSCGATMA1DKR
SP000527424
IFEINFBSC079N03LSCGATMA1
2156-BSC079N03LSCGATMA1
BSC079N03LSCGATMA1TR
BSC079N03LSCGATMA1-ND
BSC079N03LSCGATMA1CT
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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