Infineon Technologies - BSC152N10NSFGATMA1

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BSC152N10NSFGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC152N10NSFGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BSC152N10NSFGATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.4 A
Maximum Pulsed Drain Current (IDM): 252 A
Surface Mount: YES
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0152 ohm
Avalanche Energy Rating (EAS): 155 mJ
Other Names: BSC152N10NSF G
BSC152N10NSFGATMA1TR
BSC152N10NSF G-ND
SP000379601
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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