BSC889N03LSGATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC889N03LSGATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BSC889N03LSGATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	13 A
Maximum Pulsed Drain Current (IDM):	180 A
Surface Mount:	YES
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.009 ohm
Avalanche Energy Rating (EAS):	10 mJ
Other Names:	BSC889N03LS GDKR-ND IFEINFBSC889N03LSGATMA1 BSC889N03LSGATMA1DKR BSC889N03LS G-ND BSC889N03LSG BSC889N03LSGATMA1TR BSC889N03LS GCT BSC889N03LS G BSC889N03LS GCT-ND 2156-BSC889N03LSGATMA1 BSC889N03LS GTR-ND SP000475952 BSC889N03LSGATMA1CT BSC889N03LS GDKR
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	NOT SPECIFIED

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