Infineon Technologies - BSC889N03MSGATMA1

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BSC889N03MSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC889N03MSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; No. of Elements: 1; Maximum Drain Current (ID): 12 A;
Datasheet BSC889N03MSGATMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 10 mJ
Other Names: BSC889N03MS GCT
BSC889N03MSGATMA1CT
BSC889N03MS GTR-ND
BSC889N03MSGATMA1TR
BSC889N03MS GDKR-ND
BSC889N03MS GCT-ND
BSC889N03MS GDKR
BSC889N03MSG
SP000507410
BSC889N03MSGATMA1DKR
BSC889N03MS G
BSC889N03MS G-ND
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 176 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0091 ohm
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