Infineon Technologies - BSF024N03LT3GXUMA1

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BSF024N03LT3GXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSF024N03LT3GXUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Terminal Form: NO LEAD;
Datasheet BSF024N03LT3GXUMA1 Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
No. of Terminals: 3
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-MBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0032 ohm
Avalanche Energy Rating (EAS): 125 mJ
Other Names: BSF024N03LT3 GDKR
SP000616988
BSF024N03LT3 GCT
BSF024N03LT3GXUMA1DKR
BSF024N03LT3GXUMA1TR
BSF024N03LT3 G-ND
BSF024N03LT3 GCT-ND
BSF024N03LT3G
BSF024N03LT3GXUMA1CT
BSF024N03LT3 GDKR-ND
BSF024N03LT3 GTR-ND
BSF024N03LT3 G
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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