BSF050N03LQ3GXUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSF050N03LQ3GXUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: BOTTOM;
Datasheet	BSF050N03LQ3GXUMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	240 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-MBCC-N2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.007 ohm
Avalanche Energy Rating (EAS):	20 mJ
Other Names:	BSF050N03LQ3 GTR-ND BSF050N03LQ3 GCT-ND BSF050N03LQ3 G BSF050N03LQ3 G-ND BSF050N03LQ3 GCT BSF050N03LQ3G BSF050N03LQ3GXUMA1DKR SP000604522 BSF050N03LQ3 GDKR-ND BSF050N03LQ3GXUMA1CT BSF050N03LQ3GXUMA1TR BSF050N03LQ3 GDKR
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

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