BSF077N06NT3GXUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSF077N06NT3GXUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0077 ohm; Case Connection: DRAIN;
Datasheet	BSF077N06NT3GXUMA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	150 mJ
Other Names:	BSF077N06NT3 GDKR BSF077N06NT3 GTR-ND BSF077N06NT3 GDKR-ND SP000605968 BSF077N06NT3 GCT-ND BSF077N06NT3 G-ND BSF077N06NT3GXUMA1CT BSF077N06NT3 G BSF077N06NT3G BSF077N06NT3GXUMA1DKR BSF077N06NT3GXUMA1TR BSF077N06NT3 GCT
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	13 A
Maximum Pulsed Drain Current (IDM):	224 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-MBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0077 ohm

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