Infineon Technologies - BSL207SPL6327HTSA1

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BSL207SPL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL207SPL6327HTSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
Datasheet BSL207SPL6327HTSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 44 mJ
Other Names: BSL207SPL6327XT
BSL207SPL6327HTSA1DKR
BSL207SPXTINDKR
BSL207SPXTINTR-ND
BSL207SPXTINCT
BSL207SP L6327
BSL207SPT
SP000095796
BSL207SPL6327HTSA1TR
BSL207SPXTINTR
BSL207SPXTINDKR-ND
2156-BSL207SPL6327HTSA1-ITTR
BSL207SPXTINCT-ND
BSL207SPL6327
BSL207SPL6327HTSA1CT
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .041 ohm
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