BSL211SPL6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSL211SPL6327HTSA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
Datasheet	BSL211SPL6327HTSA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	4.7 A
Maximum Pulsed Drain Current (IDM):	18.8 A
Surface Mount:	YES
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.067 ohm
Avalanche Energy Rating (EAS):	26 mJ
Other Names:	BSL211SPL6327HTSA1TR BSL211SPL6327INDKR SP000095797 BSL211SPL6327HTSA1DKR BSL211SPL6327XT BSL211SP L6327 BSL211SP L6327-ND BSL211SPL6327INCT BSL211SPL6327HTSA1CT BSL211SPL6327INDKR-ND BSL211SPL6327INCT-ND BSL211SPL6327 BSL211SPL6327INTR BSL211SPL6327INTR-ND
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	NOT SPECIFIED

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