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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSL303SPEH6327XTSA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 6.3 A; JESD-609 Code: e3; Additional Features: AVALANCHE RATED; |
| Datasheet | BSL303SPEH6327XTSA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 30 mJ |
| Other Names: |
ROCINFBSL303SPEH6327XTSA1 SP000953144 2156-BSL303SPEH6327XTSA1 |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 6.3 A |
| Maximum Pulsed Drain Current (IDM): | 25.2 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 30 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | AEC-Q101 |
| Maximum Drain-Source On Resistance: | .033 ohm |
