Infineon Technologies - BSL716SNH6327XTSA1

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BSL716SNH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL716SNH6327XTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 75 V; No. of Terminals: 6; Maximum Pulsed Drain Current (IDM): 10 A;
Datasheet BSL716SNH6327XTSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 33 mJ
Other Names: 2156-BSL716SNH6327XTSA1
SP000942924
INFINFBSL716SNH6327XTSA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.5 A
Maximum Pulsed Drain Current (IDM): 10 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 75 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .15 ohm
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