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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSO080P03NS3EGXUMA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 149 mJ; Moisture Sensitivity Level (MSL): 3; |
| Datasheet | BSO080P03NS3EGXUMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 9.8 A |
| Maximum Pulsed Drain Current (IDM): | 48 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .008 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Avalanche Energy Rating (EAS): | 149 mJ |
| Other Names: |
BSO080P03NS3EG BSO080P03NS3EGXUMA1TR BSO080P03NS3E GCT BSO080P03NS3E G BSO080P03NS3E GDKR BSO080P03NS3E G-ND BSO080P03NS3E GTR-ND 2156-BSO080P03NS3EGXUMA1 IFEINFBSO080P03NS3EGXUMA1 BSO080P03NS3EGXUMA1DKR BSO080P03NS3E GCT-ND BSO080P03NS3EGXUMA1CT SP000472992 BSO080P03NS3E GDKR-ND |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
