BSO303SPHXUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSO303SPHXUMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
Datasheet	BSO303SPHXUMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	7.2 A
Maximum Pulsed Drain Current (IDM):	36 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.021 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	97 mJ
Other Names:	BSO303SP HCT BSO303SP HDKR-ND BSO303SP H BSO303SPH BSO303SPHXUMA1CT BSO303SP HCT-ND BSO303SPHXUMA1DKR 2156-BSO303SPHXUMA1 BSO303SP HTR-ND BSO303SPHXUMA1TR IFEINFBSO303SPHXUMA1 BSO303SP H-ND SP000613848 BSO303SP HDKR
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE

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