Infineon Technologies - BSO303SPNTMA1

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BSO303SPNTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO303SPNTMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): 8.9 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BSO303SPNTMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 97 mJ
Other Names: BSO303SPNTMA1CT
BSO303SPNTMA1TRINACTIVE
BSO303SPXTINTR
BSO303SPT
BSO303SPNTMA1CTINACTIVE
BSO303SPINCT
BSO303SPINCT-ND
BSO303SPINTR-ND
2156-BSO303SPNTMA1
IFEINFBSO303SPNTMA1
BSO303SP
BSO303SPXTINCT
BSO303SPNTMA1TR
BSO303SPXTINTR-ND
BSO303SPXTINCT-ND
BSO303SPINTR
SP000014019
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.9 A
Maximum Pulsed Drain Current (IDM): 35.6 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .021 ohm
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