BSO613SPVGHUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSO613SPVGHUMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; No. of Elements: 1;
Datasheet	BSO613SPVGHUMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3.44 A
Maximum Pulsed Drain Current (IDM):	13.8 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.13 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	150 mJ
Other Names:	BSO613SPVGHUMA1CT BSO613SPV GDKR BSO613SPV GCT BSO613SPV GCT-ND BSO613SPV GDKR-ND BSO613SPV GTR-ND BSO613SPVGXT BSO613SPVGHUMA1DKR BSO613SPV G BSO613SPVG SP000216309 BSO613SPVGHUMA1TR BSO613SPV G-ND BSO613SPVGT
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED

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