Infineon Technologies - BSP125L6433HTMA1

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BSP125L6433HTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP125L6433HTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain-Source On Resistance: 45 ohm; JESD-30 Code: R-PDSO-G4;
Datasheet BSP125L6433HTMA1 Datasheet
NAME DESCRIPTION
Other Names: BSP125L6433HTMA1CT
BSP125 L6433-ND
BSP125L6433XT
BSP125L6433
BSP125L6433HTMA1DKR
BSP125 L6433DKR
BSP125 L6433DKR-ND
IFEINFBSP125L6433HTMA1
BSP125 L6433TR-ND
BSP125L6433HTMA1TR
BSP125 L6433CT-ND
BSP125 L6433
2156-BSP125L6433HTMA1-ITTR
SP000089211
BSP125 L6433CT
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .12 A
Maximum Pulsed Drain Current (IDM): .48 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 600 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 45 ohm
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