BSP296L6433HTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP296L6433HTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
Datasheet	BSP296L6433HTMA1 Datasheet

NAME	DESCRIPTION
Other Names:	BSP296 L6433 BSP296L6433HTMA1DKR 2156-BSP296L6433HTMA1-ITTR BSP296 L6433-ND IFEINFBSP296L6433HTMA1 BSP296L6433 BSP296L6433HTMA1TR BSP296 L6433CT BSP296 L6433TR-ND BSP296 L6433CT-ND BSP296L6433HTMA1CT BSP296 L6433DKR BSP296L6433XT BSP296 L6433DKR-ND SP000089212
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.1 A
Maximum Pulsed Drain Current (IDM):	4.4 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.7 ohm

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