Infineon Technologies - BSP296NL6327HTSA1

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BSP296NL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP296NL6327HTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G4;
Datasheet BSP296NL6327HTSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 15 mJ
Other Names: SP000942910
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.2 A
Maximum Pulsed Drain Current (IDM): 4.6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .6 ohm
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