Infineon Technologies - BSP298L6327HUSA1

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BSP298L6327HUSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP298L6327HUSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: GULL WING; Additional Features: AVALANCHE RATED;
Datasheet BSP298L6327HUSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 130 mJ
Other Names: BSP298 L6327-ND
SP000088258
BSP298 L6327
INFINFBSP298L6327HUSA1
2156-BSP298L6327HUSA1-ITTR
BSP298L6327HUSA1TR
BSP298L6327XT
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .5 A
Maximum Pulsed Drain Current (IDM): 2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 400 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 3 ohm
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