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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSP299L6327HUSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .4 A; No. of Terminals: 4; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | BSP299L6327HUSA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .4 A |
| Maximum Pulsed Drain Current (IDM): | 1.6 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 4 ohm |
| Avalanche Energy Rating (EAS): | 130 mJ |
| Other Names: |
BSP299L6327XT BSP299L6327HUSA1DKR BSP299L6327HUSA1CT BSP299L6327 BSP299 L6327CT BSP299 L6327 BSP299 L6327DKR-ND 2156-BSP299L6327HUSA1-ITTR BSP299 L6327DKR INFINFBSP299L6327HUSA1 BSP299 L6327CT-ND BSP299L6327HUSA1TR BSP299 L6327TR-ND SP000089200 BSP299 L6327-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 500 V |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | AEC-Q101 |
