Infineon Technologies - BSP300L6327HUSA1

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BSP300L6327HUSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP300L6327HUSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 36 mJ; Package Body Material: PLASTIC/EPOXY;
Datasheet BSP300L6327HUSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .19 A
Maximum Pulsed Drain Current (IDM): .76 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 20 ohm
Avalanche Energy Rating (EAS): 36 mJ
Other Names: BSP300L6327HUSA1TR
INFINFBSP300L6327HUSA1
BSP300L6327XT
BSP300 L6327
2156-BSP300L6327HUSA1-ITTR
BSP300 L6327-ND
SP000089201
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 800 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
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