Infineon Technologies - BSP320SL6327HTSA1

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BSP320SL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP320SL6327HTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .12 ohm; Maximum Pulsed Drain Current (IDM): 11.6 A; Additional Features: AVALANCHE RATED;
Datasheet BSP320SL6327HTSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 60 mJ
Other Names: BSP320S L6327DKR-ND
2156-BSP320SL6327HTSA1-ITTR
BSP320SL6327HTSA1TR
BSP320S L6327TR-ND
BSP320S L6327CT-ND
BSP320S L6327-ND
BSP320SL6327
BSP320S L6327
BSP320SL6327HTSA1CT
BSP320SL6327HTSA1DKR
BSP320S L6327DKR
BSP320S L6327CT
SP000235375
IFEINFBSP320SL6327HTSA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.9 A
Maximum Pulsed Drain Current (IDM): 11.6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .12 ohm
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