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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSZ042N04NSGATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; No. of Elements: 1; JESD-30 Code: R-PDSO-N8; |
| Datasheet | BSZ042N04NSGATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 40 A |
| Maximum Pulsed Drain Current (IDM): | 160 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0042 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 150 mJ |
| Other Names: |
BSZ042N04NSGINCT-ND BSZ042N04NS G BSZ042N04NSGINCT BSZ042N04NSGATMA1DKR BSZ042N04NSGINDKR-ND BSZ042N04NSGINTR-ND BSZ042N04NSGXT BSZ042N04NSGATMA1CT BSZ042N04NSG 2156-BSZ042N04NSGATMA1 BSZ042N04NSGINTR BSZ042N04NSGATMA1TR SP000388300 IFEINFBSZ042N04NSGATMA1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, HIGH VOLTAGE |
