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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BUZ30AHXKSA1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 21 A; JESD-609 Code: e3; |
| Datasheet | BUZ30AHXKSA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 21 A |
| Maximum Pulsed Drain Current (IDM): | 84 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .13 ohm |
| Avalanche Energy Rating (EAS): | 450 mJ |
| Other Names: |
BUZ30A H-ND IFEINFBUZ30AHXKSA1 SP000682990 BUZ30AH BUZ30A H 2156-BUZ30AHXKSA1 |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
