BUZ73AH3046 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BUZ73AH3046
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-220AB;
Datasheet	BUZ73AH3046 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	120 mJ
Other Names:	BUZ73AH3046 BUZ73AH3046XKSA1 BUZ73A H3046-ND SP000683006
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	5.5 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	22 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	200 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.6 ohm

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