Infineon Technologies - BUZ73ALHXKSA1

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BUZ73ALHXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ73ALHXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 5.5 A; Minimum DS Breakdown Voltage: 200 V; Package Style (Meter): FLANGE MOUNT;
Datasheet BUZ73ALHXKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .6 ohm
Avalanche Energy Rating (EAS): 120 mJ
Other Names: INFINFBUZ73ALHXKSA1
BUZ73AL H
SP000683012
BUZ73ALH
BUZ73AL H-ND
2156-BUZ73ALHXKSA1-IT
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT SPECIFIED
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