Infineon Technologies - IFF600B12ME4S8PB11BOSA1

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IFF600B12ME4S8PB11BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IFF600B12ME4S8PB11BOSA1
Description N-Channel; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn Off Time (toff): 750 ns; Case Connection: ISOLATED;
Datasheet IFF600B12ME4S8PB11BOSA1 Datasheet
NAME DESCRIPTION
Other Names: 2156-IFF600B12ME4S8PB11BOSA1
SP001665634
INFINFIFF600B12ME4S8PB11BOSA1
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.35 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 750 ns
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 250 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
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