IPA65R660CFDXKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPA65R660CFDXKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 650 V; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	IPA65R660CFDXKSA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6 A
Maximum Pulsed Drain Current (IDM):	17 A
Surface Mount:	NO
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.66 ohm
Avalanche Energy Rating (EAS):	115 mJ
Other Names:	IPA65R660CFD-ND IPA65R660CFD SP000838284 2156-IPA65R660CFDXKSA1-448
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	650 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

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