IPA80R1K4CEXKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPA80R1K4CEXKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 12 A; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 800 V;
Datasheet	IPA80R1K4CEXKSA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	170 mJ
Other Names:	2156-IPA80R1K4CEXKSA1-IT IFEINFIPA80R1K4CEXKSA1 SP001271052
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.9 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	12 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	800 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	1.4 ohm

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