Infineon Technologies - IPB023N04NGATMA1

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IPB023N04NGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB023N04NGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .0023 ohm; Minimum DS Breakdown Voltage: 40 V;
Datasheet IPB023N04NGATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0023 ohm
Avalanche Energy Rating (EAS): 150 mJ
Other Names: IPB023N04N GDKR-ND
IPB023N04NG
IPB023N04N GDKR
SP000391519
IPB023N04NGATMA1TR
IPB023N04NGATMA1DKR
IPB023N04N G
IPB023N04N GCT
IPB023N04N G-ND
IPB023N04N GCT-ND
IPB023N04NGATMA1CT
IPB023N04N GTR-ND
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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