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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPB023N06N3GATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | IPB023N06N3GATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 140 A |
| Maximum Pulsed Drain Current (IDM): | 560 A |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0023 ohm |
| Avalanche Energy Rating (EAS): | 330 mJ |
| Other Names: |
IPB023N06N3G IPB023N06N3 GDKR IPB023N06N3GATMA1TR SP000453048 IPB023N06N3 GCT IPB023N06N3 GDKR-ND IPB023N06N3GATMA1CT IPB023N06N3 G-ND IPB023N06N3 G IPB023N06N3GATMA1DKR IPB023N06N3 GCT-ND IPB023N06N3 GTR-ND |
| JEDEC-95 Code: | TO-263 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
