Infineon Technologies - IPB049N06L3GATMA1

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IPB049N06L3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB049N06L3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-263AB;
Datasheet IPB049N06L3GATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0047 ohm
Avalanche Energy Rating (EAS): 77 mJ
Other Names: IPB049N06L3 GCT-ND
IPB049N06L3 GDKR
SP000453056
IPB049N06L3 GTR-ND
IPB049N06L3 G
IPB049N06L3 G-ND
IPB049N06L3GATMA1TR
IPB049N06L3G
IPB049N06L3GATMA1DKR
IPB049N06L3GATMA1CT
IPB049N06L3 GDKR-ND
IPB049N06L3 GCT
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT SPECIFIED
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