Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPB075N04LGATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2; |
| Datasheet | IPB075N04LGATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 50 A |
| Maximum Pulsed Drain Current (IDM): | 350 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0105 ohm |
| Avalanche Energy Rating (EAS): | 20 mJ |
| Other Names: |
IPB075N04L G IPB075N04L GTR-ND IPB075N04LGATMA1TR IPB075N04LGATMA1DKR IPB075N04L G-ND IPB075N04L GCT IPB075N04L GCT-ND IPB075N04LG IPB075N04LGATMA1CT SP000387943 IPB075N04L GDKR-ND IPB075N04L GDKR |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
