IPB100N04S303ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB100N04S303ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 400 A; Maximum Drain-Source On Resistance: .0028 ohm; Package Body Material: PLASTIC/EPOXY;
Datasheet	IPB100N04S303ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0028 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	898 mJ
Other Names:	IPB100N04S3-03CT-ND IPB100N04S303ATMA1DKR IPB100N04S3-03-ND IPB100N04S303ATMA1CT IPB100N04S3-03CT INFINFIPB100N04S303ATMA1 SP000260847 IPB100N04S303ATMA1TR 2156-IPB100N04S303ATMA1 IPB100N04S3-03TR IPB100N04S3-03TR-ND IPB100N04S303 IPB100N04S3-03DKR IPB100N04S3-03 IPB100N04S3-03DKR-ND
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Additional Features:	ULTRA LOW RESISTANCE

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