Infineon Technologies - IPB160N04S203ATMA1

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IPB160N04S203ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB160N04S203ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0029 ohm; Minimum DS Breakdown Voltage: 40 V; Package Body Material: PLASTIC/EPOXY;
Datasheet IPB160N04S203ATMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 810 mJ
Other Names: 2156-IPB160N04S203ATMA1
IPB160N04S2-03-ND
SP000218151
IPB160N04S203ATMA1TR
INFIPB160N04S203ATMA1
IPB160N04S2-03
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 160 A
JEDEC-95 Code: TO-263
Maximum Pulsed Drain Current (IDM): 640 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 40 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA-LOW RESISTANCE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0029 ohm
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