Infineon Technologies - IPB160N08S403ATMA1

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IPB160N08S403ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB160N08S403ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
Datasheet IPB160N08S403ATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 160 A
Maximum Pulsed Drain Current (IDM): 640 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0032 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 350 mJ
Other Names: SP000989092
JEDEC-95 Code: TO-263
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
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