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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPB180N06S4H1ATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 700 mJ; Transistor Element Material: SILICON; |
| Datasheet | IPB180N06S4H1ATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 180 A |
| Maximum Pulsed Drain Current (IDM): | 720 A |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0017 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 700 mJ |
| Other Names: |
IPB180N06S4-H1 2156-IPB180N06S4H1ATMA1-ITTR INFINFIPB180N06S4H1ATMA1 SP000415562 IPB180N06S4-H1-ND IPB180N06S4H1ATMA1TR |
| JEDEC-95 Code: | TO-263 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | ULTRA-LOW RESISTANCE |
| Reference Standard: | AEC-Q101 |
