Infineon Technologies - IPB22N03S4L15ATMA1

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IPB22N03S4L15ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB22N03S4L15ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 30 V;
Datasheet IPB22N03S4L15ATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 88 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0146 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 20 mJ
Other Names: INFINFIPB22N03S4L15ATMA1
IPB22N03S4L15ATMA1TR
IPB22N03S4L-15INCT
IPB22N03S4L-15INDKR-ND
2156-IPB22N03S4L15ATMA1
IPB22N03S4L-15INTR
IPB22N03S4L-15INCT-ND
IPB22N03S4L15ATMA1CT
IPB22N03S4L-15
IPB22N03S4L-15INTR-ND
IPB22N03S4L-15INDKR
IPB22N03S4L-15-ND
IPB22N03S4L15ATMA1DKR
SP000275308
IPB22N03S4L15
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Additional Features: ULTRA LOW RESISTANCE
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