Infineon Technologies - IPB26CN10NGATMA1

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IPB26CN10NGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB26CN10NGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .026 ohm;
Datasheet IPB26CN10NGATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 140 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .026 ohm
Avalanche Energy Rating (EAS): 65 mJ
Other Names: SP000277692
IPB26CN10N G-ND
2156-IPB26CN10NGATMA1-ITTR
IPB26CN10N G
IPB26CN10NGATMA1TR
INFINFIPB26CN10NGATMA1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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