Infineon Technologies - IPB47N10SL26ATMA1

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IPB47N10SL26ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB47N10SL26ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
Datasheet IPB47N10SL26ATMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 47 A
Maximum Pulsed Drain Current (IDM): 188 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .04 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 400 mJ
Other Names: IPB47N10SL-26CT
IPB47N10SL26ATMA1CT
2156-IPB47N10SL26ATMA1
IPB47N10SL26ATMA1DKR
IPB47N10SL26
IPB47N10SL-26-ND
SP000225701
IPB47N10SL-26DKR-ND
IPB47N10SL-26CT-ND
IPB47N10SL-26DKR
IPB47N10SL-26TR-ND
IPB47N10SL-26
IPB47N10SL26ATMA1TR
IPB47N10SL-26TR
IFEINFIPB47N10SL26ATMA1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): 245
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